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triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 13 - 17 ghz 2.5 watt, 25db power amplifier TGA2505-EPU key features and performance ? 34 dbm midband pout ? 25 db nominal gain ? 7 db typical input return loss ? 12 db typical output return loss ? built-in directional power detector with reference ? 0.25m phemt technology ? bias conditions: 7v, 640ma ? chip dimensions:2.0 x 1.4 x 0.1 mm (80 x 55 x 4 mils) preliminary measured performance bias conditions: vd=7v id=640ma primary applications ?vsat ? point-to-point 0 5 10 15 20 25 30 11 12 13 14 15 16 17 18 19 frequency (ghz) s21 (db) -20 -15 -10 -5 0 5 10 s11, s22 (db) s21 s11 s22 25 26 27 28 29 30 31 32 33 34 35 11 12 13 14 15 16 17 18 19 frequency (ghz) psat (dbm) 10 15 20 25 30 35 40 45 50 55 60 pae@psat (%) psat pae
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 1300 ma 2/ | i g | gate supply current 18 ma p in input continuous wave power 24 dbm 2/ p d power dissipation 6.43 w 2/ 3 / t ch operating channel temperature 150 0 c4/ 5 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 70 c, the median life is reduced from 8.9e+6 to 1e+6. 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. table ii dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1/ i dss 80 381 ma 1/ g m 175 425 ms 2/ |v p | 0.5 1.5 v 2/ |v bvgs | 830 v 2/ |v bvgd | 13 30 v 1/ measurements are performed on a 800 m m fet. 2/ v p , v bvgd , and v bvgs are negative.
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU table iii rf characterization table (t a = 25 q c, nominal) (vd = 7v, id = 640ma r 5%) limits symbol parameter test condition typ units gain small signal gain f = 13 C 17 ghz 25 db irl input return loss f = 13 C 17 ghz 7 db orl output return loss f = 13 C 17 ghz 12 db pwr output power @ pin = +15 dbm f = 13 C 17 ghz 34 dbm note: table iii lists the rf characteristics of typical devices as determined by fixtured measurements. table iv thermal information parameter test condition t ch ( q c) r t jc ( q c/w) mttf (hrs) r q jc thermal resistance (channel to backside) v d = 7v i d = 640ma p d = 4.48w 125.74 12.44 8.9e+6 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance TGA2505-EPU 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 11 12 13 14 15 16 17 18 19 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 11 12 13 14 15 16 17 18 19 frequency (ghz) s11,s22 (db) s11 s22
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU typical fixtured performance 30 30.5 31 31.5 32 32.5 33 33.5 34 34.5 35 11 12 13 14 15 16 17 18 19 frequency (ghz) pout (dbm) psat p2db 10 15 20 25 30 35 40 11 12 13 14 15 16 17 18 19 frequency (ghz) pae (%) pae @ psat pae @ p2db
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU typical fixtured performance 17 19 21 23 25 27 29 31 33 35 37 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 input power (dbm) output power (dbm) 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 id (ma) 13.5 ghz 14.0 ghz 14.5 ghz
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU typical fixtured performance -36 -30 -24 -18 -12 -6 0 6 12 18 16 18 20 22 24 26 28 30 output power/tone (dbm) imd3 (dbm) 13ghz 14ghz 15ghz 35 36 37 38 39 40 41 42 43 44 45 11 12 13 14 15 16 17 18 19 frequency (ghz) ip3 avg (dbm)
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing TGA2505-EPU 8qlwvploolphwhuvlqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdg5),qsxw[[ %rqgsdg9uhi[[ %rqgsdg9g[[ %rqgsdg9g[[ %rqgsdg5)2xwsxw[[ %rqgsdg9ghw[[ %rqgsdg9j[[ %rqgsdg9j[[
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. power detector 40k : 40k : +5v vdet vref 50 : rf out dut 5pf mmic external tga2505 power detector @ 14ghz 0 0.1 0.2 0.3 0.4 0.5 0.6 0 102030405060 sqrt pout (mw^0.5) vref-vdet (v) (20 dbm) (26 dbm) (29.5 dbm) (32 dbm) (34 dbm) TGA2505-EPU
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA2505-EPU chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 100pf vg input tfn output tfn 100pf vd off chip r=10 : off chip c=0.1 p f off chip r=10 : off chip c=0.1 p f
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com advance product information december 10, 2004 11 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2505-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes

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